PART |
Description |
Maker |
BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN From old datasheet system NPN Silicon Power Transistors POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Mobility Holdings, Inc.
|
MJE5740G MJE574006 MJE5742G MJE5742 MJE5740 |
NPN Silicon Power Darlington Transistors 8 AMPERES 300?400 VOLTS 80 WATTS NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
ONSEMI[ON Semiconductor]
|
BU208A ON0232 |
5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semiconductor Motorola, Inc
|
BUV20 BUV20_D ON0256 |
From old datasheet system 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V Darlington Transistors NPN Silicon Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
MJW16206 |
POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA POWER TRANSISTORS NPN SILICON CASE 77-09 TO-225AA TYPE From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
BUH150 ON0241 |
POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc ONSEMI[ON Semiconductor]
|